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Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer

2021-10-08

 

Author(s): Huang, JH (Huang, Junhui); Chen, H (Chen, Hao); Zhuo, ZY (Zhuo, Zhiyao); Wang, J (Wang, Jian); Li, SL (Li, Shulun); Ding, K (Ding, Kun); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan); Jiang, DS (Jiang, Desheng); Dou, XM (Dou, Xiuming); Sun, BQ (Sun, Baoquan)

Source: CHINESE PHYSICS B Volume: 30 Issue: 9 Article Number: 097805 DOI: 10.1088/1674-1056/ac0818 Published: SEP 2021

Abstract: A very long lifetime exciton emission with non-single exponential decay characteristics has been reported for single InA-s/GaAs quantum dot (QD) samples, in which there exists a long-lived metastable state in the wetting layer (WL) through radiative field coupling between the exciton emissions in the WL and the dipole field of metal islands. In this article we have proposed a new three-level model to simulate the exciton emission decay curve. In this model, assuming that the excitons in a metastable state will diffuse and be trapped by QDs, and then emit fluorescence in QDs, a stretched-like exponential decay formula is derived as I(t) = At beta-1 e(-(rt) beta) , which can describe well the long lifetime decay curve with an analytical expression of average lifetime = (1)(r)Gamma((1)(beta)+1) Accession Number: WOS:000699999700001

ISSN: 1674-1056

eISSN: 2058-3834

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