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Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

2021-10-08

 

Author(s): Zhang, L (Zhang, Lian); Wang, R (Wang, Rong); Liu, Z (Liu, Zhe); Cheng, Z (Cheng, Zhe); Tong, XD (Tong, Xiaodong); Xu, JX (Xu, Jianxing); Zhang, SY (Zhang, Shiyong); Zhang, Y (Zhang, Yun); Chen, FX (Chen, Fengxiang)

Source: MATERIALS Volume: 14 Issue: 18 Article Number: 5339 DOI: 10.3390/ma14185339 Published: SEP 2021

Abstract: This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 x 10(17)/cm(3) and 3 x 10(19)/cm(3) with adjustable hole mobility from 3 to 16 cm(2)/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (Mg-In). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mg-i), which has very low formation energy.

Accession Number: WOS:000700718300001

PubMed ID: 34576563

eISSN: 1996-1944

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